The MDC901 is a non-isolated high-side and low-side gate driver with floating regulators and integrated level shifting, specifically developed to reliably drive enhanced mode GaN devices.
MDC901 evaluation kits enables easy design-in and validation of the MDC901.
The MDC901 is available as packaged devices (QFN41), full wafers and bare dies. For technical documention or sales information on the bare die & wafer options, pleace contact MinDCet directly at sales@mindcet.com.
We have developed a high-quality evaluation board to give all power designers a head start for designing-in the MDC901 GaN gate driver. The MDC901-EVBHB is a step-down converter board in a half-bridge configuration for out-of-the-box device characterization and testing.
Take a look at the MDC901 & Evaluation Kit Overview for evaluation kit information.
High performance, 200 V GaN gate driver in QFN package (1)
Full wafer of MDC901 devices, tested for known-good-dies
200V Half-bridge open-loop evaluation kit utilizing the MDC901 and 200V EPC GaN FETs
150V Half-bridge open-loop evaluation kit utilizing the MDC901 and 150V Nexperia HEMTs
150V Half-bridge open-loop evaluation kit utilizing the MDC901 and 150V Innoscience HEMTs
100V Half-bridge open-loop evaluation board utilizing the MDC901 and 100V GaN Systems HEMTs
(1) The devices are not finished in qualification so compliance to MinDCet quality standards and expected lifetime is excluded. Device parameters might therefore deviate from the datasheet values and can be changed till final release (currently conditionally released with final release expected May 2025).