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200 V GaN Gate Driver

MDC901 High Performance, 200 V Gate Driver IC

The MDC901 is a non-isolated high-side and low-side gate driver with floating regulators and integrated level shifting, specifically developed to reliably drive enhanced mode GaN devices.

MDC901 evaluation kits enables easy design-in and validation of the MDC901.

Key Features
    • Unprecedented gate drive strength up to 9A
    • Separate pull-up and pull-down outputs for gate drive tuning
    • Programmable true floating regulators (5 or 6V), protecting the sensitive GaN gate against overcharging.
    • Integrated charge pump for 100% duty cycle applications
    • High efficiency integrated bootstrap diodes
    • Automatic closed-loop and programmable dead-time
    • Integrated 5V regulator enables single supply voltage operation
    • 200V operation, supporting negative source-voltage transients down to -4V
    Benefits
    • Slew rate capability in excess of 100V/ns
    • Fast design-in thanks to EVB layout examples
    • Diagnostics:
      • Gate signal monitoring outputs
      • Die temperature monitoring 
      • Undervoltage lockout outputs for HS and LS
    • Highly compacted solution compared to other solution with the same functionality
    • Separate turn-on/off programmable feed-forward dead-time
    • All-in one solution : integrated 5V linear regulators for I/O
    • Propagation delay : 30ns, with 1ns delay matching between HS and LS
    • Tunable dead-time for optimal switching match
    Applications
    • Highly-efficient server PoL converters
    • High voltage pulsers for MEMS (ultrasound transducers, MEMS switches)
    • DC-DC converters
    • AC-DC converters
    • Class-D audio amplifiers
    Use Cases
    • Data & server centers
    • High quality speaker systems
    • High precision motor drives
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    The MDC901 is available as packaged devices (QFN41), full wafers and bare dies. For technical documention or sales information on the bare die & wafer options, pleace contact MinDCet directly at sales@mindcet.com.

      

    Block Diagram

    MDC901 Evaluation Kit

    We have developed a high-quality evaluation board to give all power designers a head start for designing-in the MDC901 GaN gate driver. The MDC901-EVBHB is a step-down converter board in a half-bridge configuration for out-of-the-box device characterization and testing.

    Take a look at the MDC901 & Evaluation Kit Overview for evaluation kit information.

    Dedicated EVK webpage for info
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    Ordering Information

    Product
    Description
    Package
    Status
    Order
    MDC901
    Description:

    High performance, 200 V GaN gate driver in QFN package (1)

    Package:
    QFN41 (7x7 mm²)
    Status:
    Available
    Order now
    MDC901-W
    Description:

    Full wafer of MDC901 devices, tested for known-good-dies

    Package:
    Full wafer
    Status:
    Available
    Order now
    MDC901-2E-EVKHB
    Description:

    200V Half-bridge open-loop evaluation kit utilizing the MDC901 and 200V EPC GaN FETs

    Package:
    Evaluation Kit
    Status:
    Available
    Order now
    MDC901-15N-EVKHB
    Description:

    150V Half-bridge open-loop evaluation kit utilizing the MDC901 and 150V Nexperia HEMTs

    Package:
    Evaluation Kit
    Status:
    Available
    Order now
    MDC901-15I-EVKHB
    Description:

    150V Half-bridge open-loop evaluation kit utilizing the MDC901 and 150V Innoscience HEMTs

    Package:
    Evaluation Kit
    Status:
    Unavailable
    Available soon
    MDC901-EVKHB
    Description:

    100V Half-bridge open-loop evaluation board utilizing the MDC901 and 100V GaN Systems HEMTs

    Package:
    Evaluation Kit
    Status:
    Unavailable
    Available soon

     

    (1) The devices are not finished in qualification so compliance to MinDCet quality standards and expected lifetime is excluded. Device parameters might therefore deviate from the datasheet values and can be changed till final release (currently conditionally released with final release expected June 2025).

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    Local floating regulators protecting the sensitive GaN gate against overcharging during free-wheeling

    Powerful gate driver with separate pull-up and pull-down path

    Local floating regulators protecting the sensitive GaN gate against overcharging during free-wheeling

    Local linear regulator capable of handling 12...30V input voltage

    Closed loop non-overlap generation + gate signal monitoring

    200V capable levelshifter, supporting slew rates beyond 100V/ns

    Programmable frequency internal charge pump, allowing 100% driver duty-cycles.

    Programmable dead-time generation

    On-die temperature sensor and undervoltage detection

    200V capable levelshifter, supporting slew rates beyond 100V/ns

    Closed loop non-overlap generation + gate signal monitoring

    Powerful gate driver with seperate pull-up and pull-down path