The MDC901 evaluation kits gives power designers a head start for design-in of the MDC901 200V GaN gate driver. With the MDC901 and GaN HEMTs comprising the half-bridge power stage, the buck converter topology acts as a flexible test platform. The kit provides complete out-of-the-box testing capabilities for quick implementation. At a PCB size of 80x90mm², the evaluation board is compact and is accompanied with all required components to directly begin testing.
Multiple EVBs are available to match to your voltage class requirement and preferred GaN HEMT supplier:
All EVBs utilize Würth Elektronik active & passive components.
Evaluation kits are available with support from the following partners:
The evaluation board is designed to enable full MDC901 function testing with the EVB. Below is a breakdown of the main PCB functional blocks, illustrating the main features and external power supply connections. For in-depth usage of the EVB, refer to the applicable Technical Manual (under Technical Documentation below), which includes a handling guide, PCB schematics, example board performance and more.
Get in touch for access to the PCB database. For product questions and technical assistance, please contact support@mindcet.com.
High performance, 200 V GaN gate driver in QFN package (1)
Full wafer of MDC901 devices, tested for known-good-dies
200V Half-bridge open-loop evaluation kit utilizing the MDC901 and 200V EPC GaN FETs
150V Half-bridge open-loop evaluation kit utilizing the MDC901 and 150V Nexperia HEMTs
150V Half-bridge open-loop evaluation kit utilizing the MDC901 and 150V Innoscience HEMTs
100V Half-bridge open-loop evaluation board utilizing the MDC901 and 100V GaN Systems HEMTs
(1) The devices are not finished in qualification so compliance to MinDCet quality standards and expected lifetime is excluded. Device parameters might therefore deviate from the datasheet values and can be changed till final release (currently conditionally released with final release expected July 2024).