MADTHOR
Dynamic & Static Power Transistor Testing
The MADTHOR Power Transistor Measurement System revolutionizes the characterization of
power transistors, combining dynamic and static test capabilities into a single powerful unit.
MADTHOR meets the strigent requirements for reliably and accurately measuring wide bandgap
power devices (GaN and SiC), as well as IGBT and silicon MOSFETs.
Whether for R&D purposes, product benchmarking or development, (pre-)qualification or for
quality control, MADTHOR accelerates device characterization and provides well-structured data
and graph outputs for analysis and documentation purposes.
Dynamic Tests: Double Pulse & Continuous Hard-Switching
- Hard-switching double pulse test (inductor switched to Vbus). Different inductances allow for different current slopes, depending on on-time, Vbus and L
- Switching losses: rising and falling edge
- Turn-on & turn-off characteristics
- High-current static test to measure static Rds(on)
- Buck mode continuous switching. Allows for continuous switching of the transistor under test (TRUT) with both forward and 3rd quadrant operation (reverse current).
- Dynamic Rds(on) measurement
Static Test: Transistor Analyzer
- Vgs-Ids curves and threshold voltage
- Drain-Source and Gate-Source leakage currents
- Pulsed Rds(on) measurements to reduce self-heating effects
- Measurement of power device parasitics: Coss, Ciss, Crss and gate resistance
- Gate charge curve and parameter extraction
Our Measurement Systems team would be glad to present the MADTHOR system in greater depth and provide a live demonstration. Schedule a meeting with us.